Track / Scope
FA - 1
FA - 2
FA - 3
Advanced Fault Isolation Techniques
- new applications using Laser Stimulation, Emission Microscopy, IR, Lock-in thermography, Laser Voltage Probing and imaging, soft defect localization, Nanoprobing, AFP, EBAC/ EBIC techniques
- Software-based Techniques (Design for Test, Bitmap, scan diagnosis)
- Novel FI Techniques
FA - 4
Advanced Physical Failure Analysis Techniques
- Advanced optical beam, ion beam, Magnetic, X-ray, SPM Techniques
- Novel PFA techniques
- Challenges in advanced NVM, MEMS and non-silicon devices PFA
- NVM, wide-band-gap device and other non-silicon devices
REL - 1
Front-End of Line (FEOL) Reliability
- Time dependent dielectric breakdown (TDDB), SBD, PBD and HBD in High-K Dielectrics.
- Bias Temperature Instability (PBTI / NBTI) and Hot Carrier Reliability.
- Random Telegraph Noise (RTN) and Single Dopant Effects.
- Self-Heating in Sub-16 nm Device Nodes.
- Process and Stress-induced Variability in FETs.
- ESD failures, Radiation Effects.
- Circuit / System level analysis of performance variability / reliability.
REL - 2
Back-End of Line (BEOL) Reliability
- Time dependent dielectric breakdown (TDDB) in Low-K Dielectrics.
- Electromigration in Copper-based Interconnects.
- Stress Migration (Stress-Induced Voiding - SIV).
- Process and Stress-induced Variability in Interconnect Failures (e.g. LER etc.).
REL - 3
- Pb-free solder electromigration.
- Cracking, corrosion, delamination, fatigue in bond pads.
- 3DIC, TSV stress and electromigration, TSV-induced device performance degradation.
- Thermomechanical stress and power dissipation issues.
- Copper wire bonding, die attach and encapsulation issues.
- Wafer bonding technology yield and reliability.
REL - 4
Non-Volatile Memory (NVM) and Non-Silicon Device Reliability
- NAND Flash, ReRAM, STTRAM, PCRAM etc.
- Endurance degradation, Retention loss, Random telegraph noise (RTN), Read disturb issues.
- Process-induced / operational time-dependent variability (die-to-die / cycle-to-cycle).
- Reliability predictions at device and array-level.
- Radiation Hardening, Forming Issues in ReRAM.
- Non-Silicon Technologies of Interest - Ge, III-V, TFTs, CNT, Graphene, Organic Devices, Thin-Film Photovoltaics, MEMS etc.
- New failure mechanisms in these devices.
- Conventional failure mechanisms (BTI, stress, RTN, EM etc.) and their relative severity in these devices.